complementary silicon power plastic transistors . . . designed for low power audio amplifier and lowcurrent, highspeed switching applications. ? high collectoremitter sustaining voltage e v ceo(sus) = 100 vdc (min) e mje243, mje253 ? high dc current gain @ i c = 200 madc h fe = 40200 = 40120 e mje243, mje253 ? low collectoremitter saturation voltage e v ce(sat) = 0.3 vdc (max) @ i c = 500 madc ? high current gain bandwidth product e f t = 40 mhz (min) @ i c = 100 madc ? annular construction for low leakages i cbo = 100 nadc (max) @ rated v cb ????????????????????????????????? ????????????????????????????????? maximum ratings ??????????????????? ??????????????????? rating ?????? ?????? symbol ?????? ?????? value ????? ????? unit ??????????????????? ??????????????????? collectoremitter voltage ?????? ?????? v ceo ?????? ?????? 100 ????? ????? vdc ??????????????????? ??????????????????? collectorbase voltage ?????? ?????? v cb ?????? ?????? 100 ????? ????? vdc ??????????????????? ??????????????????? emitterbase voltage ?????? ?????? v eb ?????? ?????? 7.0 ????? ????? vdc ??????????????????? ??????????????????? collector current e continuous peak ?????? ?????? i c ?????? ?????? 4.0 8.0 ????? ????? adc ??????????????????? ??????????????????? base current ?????? ?????? i b ?????? ?????? 10 ????? ????? adc ??????????????????? ? ????????????????? ? ??????????????????? total power dissipation @ t c = 25 c derate above 25 c ?????? ? ???? ? ?????? p d ?????? ? ???? ? ?????? 15 0.12 ????? ? ??? ? ????? watts w/ac ??????????????????? ??????????????????? total power dissipation @ t a = 25 c derate @ 25 c ?????? ?????? p d ?????? ?????? 1.5 0.012 ????? ????? watts w/ c ??????????????????? ? ????????????????? ? ??????????????????? operating and storage junction temperature range ?????? ? ???? ? ?????? t j , t stg ?????? ? ???? ? ?????? 65 to +150 ????? ? ??? ? ????? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????? ??????????????????? characteristic ?????? ?????? symbol ?????? ?????? max ????? ????? unit ??????????????????? ??????????????????? thermal resistance, junction to case ?????? ?????? q jc ?????? ?????? 8.34 ????? ????? c/w ??????????????????? ??????????????????? thermal resistance, junction to ambient ?????? ?????? q ja ?????? ?????? 83.4 ????? ????? c/w preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 10 1 publication order number: mje243/d mje243 mje253 4 ampere power transistors complementary silicon 100 volts 15 watts *on semiconductor preferred device * npn pnp * case 7709 to225aa 3 2 1 style 1: pin 1. emitter 2. collector 3. base
mje243 mje253 http://onsemi.com 2 16 20 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 12 p d , power dissipation (watts) 1.6 0 1.2 8.0 0.8 4.0 0.4 80 140 t c p d , power dissipation (watts) t a ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (i c = 10 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 100 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) (v ce = 100 vdc, i e = 0, t c = 125 c) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.1 0.1 ??? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 7.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 0.1 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 200 madc, v ce = 1.0 vdc) (i c = 1.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 40 15 ???? ? ?? ? ? ?? ? ???? 180 e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.3 0.6 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 2.0 adc, i b = 200 madc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 500 madc, v ce = 1.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 40 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? e ???? ? ?? ? ???? 50 ??? ? ? ? ??? pf
mje243 mje253 http://onsemi.com 3 figure 2. switching time test circuit +11 v 25 m s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma for pnp test circuit, reverse all polarities 1k i c , collector current (amps) v cc = 30 v i c /i b = 10 t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 3. turnon time 3 2 5 2 13 t r npn mje243 pnp mje253 0.02 t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal resistance q jc (t) = r(t) q jc q jc = 8.34 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0 (single pulse) (normalized) figure 4. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 10 v ce , collector-emitter voltage (volts) 0.1 30 0.01 0.05 figure 5. active region safe operating area 500 m s dc 5.0 20 10 7.0 5.0 3.0 2.0 1.0 100 m s t j = 150 c i c , collector current (amp) 0.2 0.5 1.0 2.0 0.02 1.0ms 100 70 50 5.0ms bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo mje243/mje253 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mje243 mje253 http://onsemi.com 4 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 6. turnoff time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 10 100 100 200 50 figure 7. capacitance 70 50 20 10 7.0 5.0 3.0 1.0 c, capacitance (pf) 2.0 t j = 25 c c ib c ob mje243 (npn) mje253 (pnp) 30 npn mje243 pnp mje253 20 70 30
mje243 mje253 http://onsemi.com 5 i c , collector current (amp) i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. aono voltages i c , collector current (amp) 200 500 0.06 0.1 0.4 4.0 0.04 100 70 50 20 0.2 i c , collector current (amp) figure 10. temperature coefficients 5.0 1.0 2.0 0.6 25 c t j = 150 c -55 c 0.04 i c , collector current (amp) 1.4 1.2 0.8 0.4 0 t j = 25 c v, voltage (volts) npn mje243 pnp mje253 100 200 70 50 30 20 2.0 h fe , dc current gain 25 c t j = 150 c -55 c v ce = 1.0 v v ce = 2.0 v v, voltage (volts) v ce(sat) v be @ v ce = 1.0 v q vb for v be 0 t j = 25 c v be(sat) @ i c /i b = 10 i c /i b = 10 v be @ v ce = 1.0 v v , temperature coefficients (mv/ c) q +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v , temperature coefficients (mv/ c) q +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v ce = 1.0 v v ce = 2.0 v 7.0 10 30 300 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.06 0.1 0.4 4.0 0.04 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 1.0 0.6 0.2 1.4 1.2 0.8 0.4 1.0 0.6 0.2 3.0 5.0 7.0 10 5.0 i c /i b = 10 v ce(sat) 5.0 v be(sat) @ i c /i b = 10 * q vc for v ce(sat) q vb for v be * q vc for v ce(sat)
mje243 mje253 http://onsemi.com 6 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
mje243 mje253 http://onsemi.com 7 notes
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